Title of article
Hydride vapour phase epitaxy for nanostructures
Author/Authors
Rodr??guez Messmer، نويسنده , , S. Lourdudoss، نويسنده , , S and Ahopelto، نويسنده , , J and Lipsanen، نويسنده , , H and Hieke، نويسنده , , K and Wesstr?m، نويسنده , , J.-O and Reithmaier، نويسنده , , J.P and Kerkel، نويسنده , , K and Forchel، نويسنده , , A and Seifert، نويسنده , , W and Carlsson، نويسنده , , N and Samuelson، نويسنده , , L، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
238
To page
241
Abstract
The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
Keywords
Patterned and selective area growth , Reduction of non-radiative centres , Hydride vapour phase epitaxy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1998
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133054
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