• Title of article

    XPS study of plasma treated carbon layers deposited on porous silicon

  • Author/Authors

    Beshkov، نويسنده , , G and Krastev، نويسنده , , V and Velchev، نويسنده , , N and Marinova، نويسنده , , Ts، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    4
  • From page
    1
  • To page
    4
  • Abstract
    A carbon film deposited on porous silicon in nitrogen plasma has been investigated by XPS. The presence of different carbon–nitrogen bonds in the whole carbonitride layer has been established. Irrespective of the low percentage of nitrogen (about 6%), it is found to participate in cyanide groups, bonds characteristic of β-C3N4 as well as in C–N and CN bonds.
  • Keywords
    Carbon film , Nitrogen plasma , XPS , Porous silicon
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1998
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2133405

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2133405