Rutherford backscattering/channeling study of the implanted MeV Au+ in silicon

1.0 MeV Au+ ions were implanted into a Si single crystal and an amorphous silicon film at room temperature. For the case of the Si single crystal, ion implantation was performed at angles of 7, 45 and 60°, respectively. The amorphous silicon film was deposited on SiO2 substrate with a thickness of ∼500 nm. The longitudinal and lateral distributions of implanted Au ions in silicon were measured by Rutherford backscattering spectrometry. The lateral spread was estimated from the tilt angle implantation. The results show that the experimental mean projected range is larger than the calculated value by ∼20%, and the experimental range straggling and lateral spread deviate significantly from the TRIM prediction. The damage in the Si single crystal induced by MeV Au+ under different fluences was studied by Rutherford backscattering/channeling. Also, the thermal behaviour of the implanted Au+ in silicon was investigated.