DLTS analysis of nickel–hydrogen complex defects in silicon

The results of a deep level transient spectroscopy (DLTS) study of nickel–hydrogen complexes in n- and p-type silicon are presented. Hydrogen is incorporated by wet-chemical etching. After etching, eleven electrically active Ni–H related levels are observed. Heat treatment enables us to investigate the thermal stability of Ni–H complexes. Possible structures of the Ni–H defects are proposed.