Title of article :
Cu-related complexes in silicon
Author/Authors :
M. and Estreicher، نويسنده , , S.K. and Hastings، نويسنده , , J.L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
155
To page :
158
Abstract :
Hartree–Fock calculations of Cu+ in Si are performed in clusters containing 44–100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper–acceptor pairs, and copper–hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.
Keywords :
Theory , Copper , Copper-acceptor pairs , Gettering
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2133790
Link To Document :
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