Title of article
The influence of Cu doping on opto-electronic properties of chemically deposited CdS
Author/Authors
Petre، نويسنده , , D and Pintilie، نويسنده , , I and Pentia، نويسنده , , E and Pintilie، نويسنده , , I and Botila، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
238
To page
243
Abstract
Cadmium sulphide (CdS) thin films were deposited on glass substrate by precipitation from aqueous solution technique. The films were doped with copper using the direct method consisting in the addition of a copper salt (CuCl2) in the deposition bath of CdS. The doped films were annealed in air, at 300°C, for 1 h. We report some structural, optical, electrical and photoelectrical properties of CdS thin films before and after Cu doping, correlated with investigation of trapping levels by Thermally Stimulated Currents (TSC) method.
Keywords
Opto-electronic , Chemically deposited CdS , Thermally stimulated currents
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133821
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