The influence of Cu doping on opto-electronic properties of chemically deposited CdS

Cadmium sulphide (CdS) thin films were deposited on glass substrate by precipitation from aqueous solution technique. The films were doped with copper using the direct method consisting in the addition of a copper salt (CuCl2) in the deposition bath of CdS. The doped films were annealed in air, at 300°C, for 1 h. We report some structural, optical, electrical and photoelectrical properties of CdS thin films before and after Cu doping, correlated with investigation of trapping levels by Thermally Stimulated Currents (TSC) method.