Title of article
EXAFS studies of Mg doped InN grown on Al2O3
Author/Authors
Blant، نويسنده , , A.V and Cheng، نويسنده , , T.S and Jeffs، نويسنده , , N.J and Flannery، نويسنده , , L.B and Harrison، نويسنده , , I and Mosselmans، نويسنده , , J.F.W and Smith، نويسنده , , A.D and Foxon، نويسنده , , C.T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
218
To page
221
Abstract
We have been studying the structural properties of Group III-nitrides by EXAFS. Previously we have investigated bulk Group III-nitrides and its alloys and have demonstrated that we can grow the full range of alloys from AlN to InN at low temperatures. Here we extend these investigations to study the local environment and lattice site occupied by dopant atoms in such samples.
Keywords
Molecular Beam Epitaxy , EXAFS , Mg doping , Semiconductors , Indium nitride , Group III-nitrides
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133968
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