A tunable blue light emission of InGaN/GaN quantum well through thermal interdiffusion

In recent years, blue light emitting diodes and lasers of III-nitride semiconductors have been of much interest. This is mainly due to its large bandgap ranging from 1.89 eV (wurtzite InN) to 3.42 eV (wurtzite GaN). InGaN/GaN quantum well (QW) structures have been used to achieve high lumens blue LEDs. In this paper, InGaN/GaN QW intermixing structure is theoretically analyzed and is used to optimize and tune the optical emission.