Title of article
A tunable blue light emission of InGaN/GaN quantum well through thermal interdiffusion
Author/Authors
Chan، نويسنده , , Michael C.Y. and Cheung، نويسنده , , Elaine M.T. and Li، نويسنده , , E.Herbert.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
283
To page
287
Abstract
In recent years, blue light emitting diodes and lasers of III-nitride semiconductors have been of much interest. This is mainly due to its large bandgap ranging from 1.89 eV (wurtzite InN) to 3.42 eV (wurtzite GaN). InGaN/GaN quantum well (QW) structures have been used to achieve high lumens blue LEDs. In this paper, InGaN/GaN QW intermixing structure is theoretically analyzed and is used to optimize and tune the optical emission.
Keywords
Thermal annealing , III-Nitride , Interdiffusion , Light emitting diode , Quantum well intermixing , InGaN/GaN
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133986
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