Title of article :
Effects of MgO annealing process in a vacuum on the discharge characteristics of AC PDP
Author/Authors :
Park، نويسنده , , Chung-Hoo and Kim، نويسنده , , Young-Kee and Park، نويسنده , , Byeong-Eon and Lee، نويسنده , , Woo-Geun and Cho، نويسنده , , Jung-Soo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
7
From page :
149
To page :
155
Abstract :
This paper deals with the relationships between various annealing conditions in a vacuum and the surface glow discharge characteristics on the MgO thin film prepared by e-beam evaporation method. The minimum discharge inception voltage is obtained for the sample annealed at 400°C for about 2 h in a clean vacuum. Above the annealing temperature of 430°C, cracks are founded on the MgO film, which results in higher discharge voltage. Moreover, the lower the annealing pressure, the lower the discharge voltage. The main factors that improves the discharge characteristics by annealing process is considered to be due to both the morphology changes or crystal structure of the MgO thin films and pumping impurities in the MgO film during the annealing process.
Keywords :
MgO thin film , e-beam evaporation , Surface Discharge , annealing process
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2134034
Link To Document :
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