Title of article
Dielectric properties of Al ∣ V2O5 ∣ Al thin film sandwich structures
Author/Authors
Venkata Ramana، نويسنده , , C and Hussain، نويسنده , , O.M and Srinivasulu Naidu، نويسنده , , B and Julien، نويسنده , , C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
173
To page
178
Abstract
Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Corning 7059 glass substrates kept at a temperature of Ts=423 K. The dielectric properties of Al ∣ V2O5 ∣ Al thin film sandwich structures were studied in the frequency range 0.1–100 kHz and in the temperature range 125–450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV.
Keywords
Electron beam evaporation , V2O5 thin films , dielectric properties
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134038
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