Title of article :
New results in sublimation growth of the SiC epilayers
Author/Authors :
Savkina، نويسنده , , N.S. and Lebedev، نويسنده , , A.A. and Davydov، نويسنده , , D.V. and Strel’chuk، نويسنده , , A.M. and Tregubova، نويسنده , , A.S. and Yagovkina، نويسنده , , M.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
3
From page :
165
To page :
167
Abstract :
In this work it has been shown that an optimized technology of sublimation epitaxial growth can be used to obtain structural perfection layers with concentration of uncompensated donors NdNa∼1×1015 cm−3 and the hole diffusion length of ∼2.5 μm.
Keywords :
sublimation growth , Concentration , 6H?SiC , diffusion length
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2134081
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2134081
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