• Title of article

    New results in sublimation growth of the SiC epilayers

  • Author/Authors

    Savkina، نويسنده , , N.S. and Lebedev، نويسنده , , A.A. and Davydov، نويسنده , , D.V. and Strel’chuk، نويسنده , , A.M. and Tregubova، نويسنده , , A.S. and Yagovkina، نويسنده , , M.A.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    3
  • From page
    165
  • To page
    167
  • Abstract
    In this work it has been shown that an optimized technology of sublimation epitaxial growth can be used to obtain structural perfection layers with concentration of uncompensated donors NdNa∼1×1015 cm−3 and the hole diffusion length of ∼2.5 μm.
  • Keywords
    sublimation growth , Concentration , 6H?SiC , diffusion length
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1999
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2134081

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2134081