Author/Authors :
Badila، نويسنده , , M and Tudor، نويسنده , , B and Brezeanu، نويسنده , , Gh and Locatelli، نويسنده , , M.L and Chante، نويسنده , , J.P and Millan، نويسنده , , J and Godignon، نويسنده , , Ph and Lebedev، نويسنده , , A and Banu، نويسنده , , V، نويسنده ,
Abstract :
Recent improvements in SiC substrate and epilayer quality have enabled the fabrication of devices with high voltage blocking capabilities. Boron compensation of a n-type base layer is often used in pn high voltage SiC diodes. In the case of large area devices, defects causing premature breakdown come into view. This paper reports 6H-SiC boron compensated (BC) pn junctions, having an experimental maximum breakdown voltage of 900 V for diodes with area up to 0.72 mm2. The current–voltage (I–V) characteristics of the structures are modeled and characterized and comparison with similar but uncompensated junctions is made.
Keywords :
parameter extraction , Boron compensation , Saturation currents , Current–voltage characteristics , Breakdown voltage , SiC pn junction
