Structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation

Experimental results of structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation is presented. The long-range influence of bulk defects on the oxidation behavior of the C-face of SiC wafers, as well as the delineation of polishing marks on the Si face, after oxidation, is presented. High field measurements on a large number of MOS-capacitor structures, fabricated on the SiC wafers, indicates that while oxide breakdown was never observed to occur in the region atop a micropipe, it generally coincided with the edge of bulk defects (within the SiC wafer) under the gate contact.