Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation

A long-time constant-capacitance deep level transient spectroscopy (LT-CC-DLTS) method has been established to investigate the energy distribution Dit and the capture-cross-section σn/p of states at the interface of 6H SiC/MOS structures. A comparison of dry and wet oxidation (1120°C) reveals a change in the distribution of interface states and a different magnitude of capture-cross-sections indicating that the interface states consist of at least two types of defects.