Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

In this article, I review some of the most recent progress and understanding in cubic silicon carbide surface properties with a special emphasis on morphology and one dimensional atomic Si lines. These investigations are primarily based on advanced experimental near field probes such as atom-resolved scanning tunneling microscopy and spectroscopy at room and high temperatures. The results of state-of-the-art ab-initio calculations using the local density functional (LDF) approach as well as STM image simulations will also be discussed in the framework of experimental results. Surface morphology, temperature-induced semiconducting ⇔ metallic reversible phase transition of Si-rich and Si-terminated 3×2 and c(4×2) (100) surface reconstructions, and the role of a large stress in surface organization will be discussed. The formation, at the 3×2→c(4×2) phase transition, of highly stable self-organized Si atomic lines having fascinating characteristics will also be described. These studies shows a very interesting and novel aspect of silicon carbide in its ability to be also a material especially suitable in nanotechnologies and indicates that SiC might become a leading material of the 21st century.