Influence of the heating ramp on the heteroepitaxial growth of SiC on Si

The influence of the heating rate on the initial growth of SiC on silicon by carbonization was investigated for two strongly differing methods: solid source molecular beam epitaxy and rapid thermal chemical vapour deposition. An improvement of the structural and morphological properties can be obtained by a two dimensional nucleation stimulated by a defined heating cycle in a (hydro-) carbon flux. This improvement is strongly associated with a decreased diffusion coefficient for silicon through the grown layer.