CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure

In this paper we have investigated the CVD growth of 3C-SiC on SOI (100) substrates at reduced temperatures employing a carbonization step with a slow temperature heating-ramp. The carbonization leads to a rapid sealing of the Si-top layer of the SOI substrate due to a high SiC nucleation density totally avoiding the commonly reported formation of cavities at the 3C-SiC/Si interface. From TEM investigations it can be shown that the crystallinity of the 3C-SiC is comparable to state-of-the-art SiC thin films on Si. Exploiting this growth process 5 μm thick 3C-SiC layers on Si (100) show excellent crystal quality with a FWHM=0.18° derived from X-ray ω-rocking curves. This is confirmed by electrical characterization using Hall measurements.