Title of article :
The nature of Mn center and exchange interaction in Ga1−xMnxAs dilute magnetic semiconductor
Author/Authors :
Twardowski، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
7
From page :
96
To page :
102
Abstract :
The s,p–d exchange interaction in GaMnAs is discussed in view of different charge states of Mn impurities present in this material. The ferromagnetic to antiferromagnetic crossover of p–d exchange is discussed on the grounds of varying concentration of neutral and ionized Mn acceptor centers in bulk, Mn-doped GaAs and GaMnAs epilayers.
Keywords :
Exchange interaction , Dilute Magnetic Semiconductors , Spin resonance
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2134286
Link To Document :
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