Title of article :
Role of orbitals in manganese oxides—ordering and fluctuation
Author/Authors :
Maezono، نويسنده , , R. and Murakami، نويسنده , , S. and Nagaosa، نويسنده , , N. and Ishihara، نويسنده , , S. and Yamanaka، نويسنده , , M. and Lee، نويسنده , , H.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
6
From page :
171
To page :
176
Abstract :
We study the manganese oxides from the viewpoint of the strongly correlated doped Mott insulator. The magnetic ordering and the charge transport are governed by the orbital degrees of freedom, and their dimensionality is controlled by the anisotropic transfer integrals between the eg-orbitals. As x increases, the magnetic structure is predicted to change as A→F→A→C→G (F, ferromagnet; A, layered antiferromagnet; C, rod-type antiferromagnet; G, usual antiferromagnet), in agreement with experiments. Especially the orbital is aligned as dx2−y2 in the metallic A state, which explains the quasi 2D transport and no canting of the spin observed experimentally. Next we discuss the ferromagnetic state without the orbital ordering due to the quantum fluctuation. Here the interplay between the electron repulsion U and the Jahn–Teller electron–phonon interaction ELR is studied with a large d model. In addition to this strong correlation, we propose that the dynamical phase separation could explain the specific heat as well as the various anomalous physical properties, e.g. resistivity, photo-emission, etc.
Keywords :
Orbitals , manganese oxides , Mott insulator
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2134327
Link To Document :
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