Effect of low temperature treatment regime on residual stress state near interface in bonded SiC/6061 Al compounds

The residual stress distributions near the interface in diffusion-bonded SiC/6061 Al model samples of various treated states were determined by means of X-ray stress measurement and finite element method (FEM). It was demonstrated that the low temperature treatment and subsequent reheating to room temperature might be used to reduce or even eliminate the residual stresses. The results of FEM calculations are in agreement with the trend of the experimental results, but show higher magnitudes of computed residual stresses. The reasons for the deviation are explained.