Concentration profile surfaces and contour studies of GaSb by liquid phase epitaxy using a simulation technique

A two-dimensional numerical simulation technique has been employed to construct the concentration profile surfaces and the concentration contours of antimony (Sb) in a gallium (Ga)-rich solution in front of the growing crystal interface during the liquid phase epitaxial growth of gallium antimonide (GaSb). This has been achieved by solving a two-dimensional diffusion equation with appropriate boundary conditions. The concentration profile surfaces and the concentration contours have been constructed for the antimony (Sb) atoms in the Ga-rich solution for different temperatures and cooling rates. The temperature contours in the melt have also been determined by solving an appropriate two-dimensional heat equation for different cooling rates and growth temperatures. Using the concentration gradient that exists at the interface, the growth rate and the growth thickness of gallium antimonide (GaSb) have been determined for different growth parameters, such as time and temperature, at different cooling rates. Our theoretical findings have been compared with the experimentally reported values.