Title of article
Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR
Author/Authors
S. Kicin، نويسنده , , S and Nov?k، نويسنده , , J and Kucera، نويسنده , , S. Hasenohrl، نويسنده , , S and Eli??، نويسنده , , P and V?vra، نويسنده , , I and Hudek، نويسنده , , P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
106
To page
110
Abstract
The possibility of preparing stair-step V- or U-grooves into a GaAs/AlAs heterostructure by isotropic and anisotropic wet chemical etching was studied. Several patterned structures with well-defined (100) planes of stairs were overgrown by MOCVD with the aim to realize quantum wires (QWRs) due to the selectivity of growth on these planes. This approach should allow for adjusting lateral and vertical dimensions independently as well as for a simple regulation of the density of QWRs. Samples were subsequently characterized by photoluminescence (PL), and it was supposed that the observed red shift could result from the presence of the QWRs.
Keywords
Quantum wires , Selective etching , Non-selective etching , Wet chemical etching , MOCVD
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134476
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