Thermally stable, highly conductive, and transparent ZnO layers prepared in situ by chemical vapor deposition

It is possible to fabricate thin epitaxial ZnO layers doped in situ with In and Ga impurities by chemical vapor deposition (CVD) in a low-pressure system. Highly conductive and transparent ZnO:Me (0.1–2 wt.%) films are deposited on (1012) sapphire substrates. Electrical, optical, and structural properties of the films are investigated. The ZnO:Me thin epitaxial layers (TEL) features unique thermal stability of their electric properties to thermocyclings within the 300–950 K temperature range in various ambient. It is found that the crystal structure perfection must be among the main factors conditioning the thermal stability of the films. It is suggested a formation of metal cluster structures-whiskers over the doped film surface.