Title of article
Latest developments in vertical gradient freeze (VGF) technology: GaAs, InP, and GaP
Author/Authors
Young، نويسنده , , M and Liu، نويسنده , , X and Zhang، نويسنده , , D and Zhu، نويسنده , , M and Hu، نويسنده , , X.Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
1
To page
6
Abstract
Vertical gradient freeze (VGF) technology grows III-V semiconductor single crystals with a low thermal gradient and in a thermal dynamically stable system. Such materials grown exhibit low dislocation density and low internal stress. VGF technology has reached the stage of commercial production of 6-in. GaAs, 3-in. InP, and 3-in. GaP. In this review, we present the latest developments of these VGF III-V semiconductors, their superior crystal qualities, electrical characteristics, mechanical strengths, and applications in commercial device manufacturing.
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134511
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