• Title of article

    Point defect characterization of GaN and ZnO

  • Author/Authors

    Look، نويسنده , , D.C. and Reynolds، نويسنده , , D.C and Fang، نويسنده , , Z.-Q and Hemsky، نويسنده , , J.W and Sizelove، نويسنده , , JR Boulton-Jones، نويسنده , , R.L، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    3
  • From page
    30
  • To page
    32
  • Abstract
    Point defects are created in bulk ZnO and epitaxial GaN by 1–2 MeV electron irradiation at 300 K, and are studied by temperature-dependent Hall effect, photoluminescence, and deep level transient spectroscopy measurements. The N vacancy is identified as a fairly shallow donor in GaN, whereas defect identifications in ZnO are uncertain at this time. Both materials, but especially ZnO, are quite resistant to displacement damage.
  • Keywords
    GaN , electron irradiation , ZNO
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1999
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2134532

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2134532