• Title of article

    Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area

  • Author/Authors

    Vasil’ev، نويسنده , , V.I and Nikitina، نويسنده , , I.P and Smirnov، نويسنده , , V.M and Tret’yakov، نويسنده , , D.N، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    3
  • From page
    67
  • To page
    69
  • Abstract
    Ga1−xInxAsySb1−y layers lattice-matched to GaSb were grown by LPE from Sb-rich melts with compositions up to x=0.4 inside the spinodal decomposition area. Crystal and optical properties of solid solutions were studied using double-crystal X-ray diffraction (DCXRD), photoluminescene (PL). The main conditions which provide epitaxial growth of stable solid solutions in spinodal decomposition area were clarified. It was found that the properties of epitaxial layers depended on the value and the type of deformation during the growth as well as the layer thickness.
  • Keywords
    LPE , Isoperiodical heterostructures , Sb-rich melts , Spinodal decomposition area
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1999
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2134555