Title of article
Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area
Author/Authors
Vasil’ev، نويسنده , , V.I and Nikitina، نويسنده , , I.P and Smirnov، نويسنده , , V.M and Tret’yakov، نويسنده , , D.N، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
3
From page
67
To page
69
Abstract
Ga1−xInxAsySb1−y layers lattice-matched to GaSb were grown by LPE from Sb-rich melts with compositions up to x=0.4 inside the spinodal decomposition area. Crystal and optical properties of solid solutions were studied using double-crystal X-ray diffraction (DCXRD), photoluminescene (PL). The main conditions which provide epitaxial growth of stable solid solutions in spinodal decomposition area were clarified. It was found that the properties of epitaxial layers depended on the value and the type of deformation during the growth as well as the layer thickness.
Keywords
LPE , Isoperiodical heterostructures , Sb-rich melts , Spinodal decomposition area
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134555
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