Title of article
Optical dispersion analysis of TiO2 thin films based on variable-angle spectroscopic ellipsometry measurements
Author/Authors
Mardare، نويسنده , , Diana and Hones، نويسنده , , Peter، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
42
To page
47
Abstract
Pure and doped TiO2 thin films, deposited by reactive r.f. sputtering onto glass substrates, have been investigated by spectroscopic ellipsometry in the wavelength range between 360 and 830 nm. Doping with Ce and Nb induces structural changes in TiO2 and modifies its optical constants. While undoped TiO2 films crystallize in a mixed rutile/anatase phase at a substrate temperature of 250°C, the doped films exhibit the anatase phase only. Using a polynomial and a single oscillator model dispersion function the spectral dependency of the refractive index and the extinction coefficient, as well as the optical band-gap have been determined. It turned out that even a moderate surface roughness in the range of 10 nm significantly influences the absolute value of the refractive index. Therefore, the surface roughness has been measured by atomic force microscopy and has been taken into account in the ellipsometric model.
Keywords
sputtering , Titanium oxide thin films , spectroscopic ellipsometry , Optical constants , AFM
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134726
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