Author/Authors :
Stanton، نويسنده , , N.M and Kent، نويسنده , , A.J and Hawker، نويسنده , , P and Cheng، نويسنده , , T.S. and Foxon، نويسنده , , C.T and Korakakis، نويسنده , , D and Campion، نويسنده , , R.P and Staddon، نويسنده , , C.R and Middleton، نويسنده , , J.R، نويسنده ,
Abstract :
Room-temperature photoenhanced wet chemical etching of MBE grown GaN has been studied during the processing of devices for a physics research programme. The process uses a 0.5 M KOH solution with illumination provided by a mercury arc lamp emitting at 365 nm. The maximum etch rate achieved was ∼45 nm min−1, much lower than that for MOCVD material etched under similar conditions. Surface morphologies vary significantly for wafers etched under nominally identical conditions, from surfaces with whiskers to highly crystallographic faces.
