Title of article
Laser-induced nanocrystalline silicon formation in a-SiO matrices
Author/Authors
Rossi، نويسنده , , M.C. and Salvatori، نويسنده , , S. and Galluzzi، نويسنده , , F. and Conte، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
299
To page
302
Abstract
Nanocrystalline silicon formation by CW laser-irradiation of amorphous silicon–oxygen alloys of variable composition has been investigated as a function of both laser power density and alloy composition. Structural changes during the annealing treatment were monitored ‘in situ’ by micro Raman spectroscopy. Careful Raman lineshape analysis in the 450–550 cm−1 range allowed the evaluation of Si nanocrystal size distribution. It is shown that depending on the size of the nanocrystallites, irradiation can yield to a strong photoluminescence (PL) enhancement or quenching.
Keywords
Nanocrystalline silicon , a-SiO matrices , Photoluminescence
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134951
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