Title of article
Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots
Author/Authors
Oswald، نويسنده , , J and Kuldovل، نويسنده , , K and Zeman، نويسنده , , J and Hulicius، نويسنده , , E and Jullian، نويسنده , , S and Potemski، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
318
To page
323
Abstract
Magneto-photoluminescence (MPL) of self-organised MOCVD epitaxially grown InAs dots embedded in GaAs has been investigated in order to identify the nature of the corresponding optical transitions and to determine the effective mass of confined electrons and holes. MPL was studied in the range of 0–28 T in Faraday and Voigt configurations. At zero field we have observed up to three PL peaks corresponding to a ground state transition (∼1 eV) and two excited state transitions (∼1.1 and ∼1.2 eV). The ground state transition showed a small diamagnetic shift, the first excited transition was split into two components and three split components were observed for the second excited transition as a function of magnetic field in the Faraday configuration. A simple one-particle Fock–Darwin model of two-dimensional electrons confined in a parabolic well seems to describe the PL behaviour in magnetic field.
Keywords
InAs , Magneto-luminescence , Quantum dots
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134961
Link To Document