Title of article
Radiation resistant microcrystals and thin films of III–V semiconductors
Author/Authors
Bolshakova، نويسنده , , I.A and Moskovets، نويسنده , , T.A and Krukovsky، نويسنده , , S.I and Zayachuk، نويسنده , , D.M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
441
To page
443
Abstract
Influence of fast neutrons with the energy of 100÷13 MeV and fluence up to 1014 n/cm2 upon InAs and InSb microcrystals and GaAs epitaxial layers, being doped by donor, amphoteric, isovalent, rare-earth and transitional impurities, was studied in the present work. It is found out that changes of main carrier concentration caused by irradiation, do not exceed 0.1% for the best InSb and GaAs samples exposed to such complex doping. The model is proposed which explains the effect of complex metallurgical doping on the improvement of radiation resistance of investigated materials.
Keywords
Semiconductors , films , radiation , Doping , Microcrystals
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135021
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