Vacancy-related defects in ion implanted and electron irradiated silicon

We have studied self-implants in Czochralski n-type silicon and compared the resulting defect states with electron irradiated material and silicon implanted with heavy ions. Using high resolution deep level transient spectroscopy, we have been able to characterize the deep energy levels of the defects produced with a resolution of more than an order of magnitude better than previously published results. We have separated and characterized the various components of the peak associated with the acceptor (−/0) charge state of the divacancy at Ec −0.43 eV. There are very clear differences in these components among the materials studied.