Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide films

The influence of rf sputtering power and annealing temperature on the dc conductivity (σRT), activation energy (ΔE) and interface trapped charge density (Dit) of rf sputtered hydrogenated amorphous silicon carbide films were investigated. The increase in σRT and the decrease in ΔE as rf power increased indicate an increase in dangling bond density. Furnace annealing, however, causes a reduction in σRT and Dit. The electrical results of the as-prepared and annealed films agreed well with the infrared results.