Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon

B++H+ and B++He+ dual implantation was used to study the effects of formation procedure of cavities in wafer surfaces on B doping behaviors. According to the Raman scattering of Si substrate, it is understood that the stress of B++H+ or B++He+ implanted specimens are smaller than that of the specimens implanted with B+ only after annealing. It is suggested that the cavities have formed in the procedure, and they can reduce Si interstitials once they are generated. On the other hand, SR (spreading resistance) measurement also reveals that the formation of cavities suppresses the transient enhanced diffusion (TED) of B atoms.