Numerical simulation for silicon crystal growth of up to 400 mm diameter in Czochralski furnaces

In the SSi project, the growth technologies for 400 mm silicon single crystals have been investigated by several numerical simulation techniques, global heat transfer analysis in a Czochralski (CZ) furnace, structural analysis, analysis of fluid dynamics for melt convection and argon gas flow. In this paper, the bake out process, the initial meltdown process, the dip process and the body process are numerically simulated, respectively. According to these results, the numerical simulation is very useful and necessary for development of the CZ furnace, designing of hot zone structures and the prediction of experimental results.