Title of article :
Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon
Author/Authors :
Popov، نويسنده , , V.P and Antonova، نويسنده , , I.V and Gutakovsky، نويسنده , , A.K and Spesivtsev، نويسنده , , E.V and Morosov، نويسنده , , I.I، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
A study of Si:H layers formed by high dose hydrogen implantation using pulsed beams was performed in the present work. Anneals in the temperature interval 200–1050oC lead to a transformation of structural and optical properties of Si:H layers. These layers were analyzed by transmission electron microscopy, Rutherford backscattering spectrometry, spectroscopic ellipsometry and secondary ion mass spectroscopy techniques.
Keywords :
Silicon , High dose , structure , Ion implantation , Hydrogen
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
