Influence of Czochralski silicon crystal growth on wafer quality: an extensive investigation using traditional and new characterization techniques

In this paper results on the relationship between Czochralski silicon crystal growth and wafer quality characteristics are presented. Several crystals grown with different oxygen content and growth parameters are examined. The growth parameters are varied in order to obtain different types and distributions of intrinsic point defects, namely vacancies and interstitials. Traditional and more recent characterization techniques are applied in this analysis, such as gate oxide integrity and light point defects evaluation, or high resolution lifetime mapping. In this way, a comprehensive picture is generated of the properties of a silicon wafer and how it is impacted by the crystal growth process.