Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance

Due to their compatibility with CMOS, multiple tunnel junctions (MTJs) are giving rise to an increasing interest in Coulomb blockade silicon devices, along with a higher demand for simulation. Whereas the operating principle has been known for a number of years, here we present new simulation results on MTJs, including geometric island size and island separation. Application of MTJ in a memory cell is discussed.