Title of article
Quantum well bandgap engineering for 1.5 μm telecom applications
Author/Authors
Ramdane، نويسنده , , A and Ougazzaden، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
66
To page
69
Abstract
After briefly presenting the advantages of using strained layers for long wavelength lasers, a review of some approaches devised for polarization independence of guided-wave in-line semiconductor optical amplifiers and electroabsorption modulators is given, together with recent test-bed applications. The achievement of photonic integrated circuits based on quantum well tuning is finally reported.
Keywords
Quantum well bandgap engineering , Test-bed applications , Telecom applications (1.5 ?m)
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135327
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