Author/Authors :
Zhukov، نويسنده , , A.E and Kovsh، نويسنده , , A.R and Ustinov، نويسنده , , V.M and Livshits، نويسنده , , D.A and Kop’ev، نويسنده , , P.S and Alferov، نويسنده , , Z.I and Ledentsov، نويسنده , , N.N and Bimberg، نويسنده , , D، نويسنده ,
Abstract :
Data are presented on the threshold and power characteristics and their dependence on the quantum dot (QD) surface density for QD diode lasers. The active region is based on the dense array of composite InAs/InAlAs self-organized QDs. The 3.5 W output power, limited by catastrophic optical damage, and a peak conversion efficiency of 45% were achieved at 10°C in 100-μm-wide diodes with uncoated facets.
