Characterization and performance of MOCVD grown 0.14-μm InP-HEMTs for low voltage applications

The layer structures of high electron mobility transistors (HEMTs) have been characterized by photoluminescence (PL), X-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS) techniques. For the low voltage applications in mind, single and double delta-doped lattice matched HEMT devices have been processed and dc and RF performance is reported. At a drain-source bias of 1.25 V, a single delta doped 0.14-μm HEMT device shows an fT of 118 GHz and fmax of 265 GHz. Similarly, a double delta doped 0.14 μm HEMT gives an fT of 135 GHz and fmax of 140 GHz. The extracted physical parameters of HEMTs from PL and XRD techniques show excellent correlation with that of the grown devices.