• Title of article

    Kinetic control of silicon carbide/metal reactions

  • Author/Authors

    Park، نويسنده , , J.S. and Landry، نويسنده , , K. and Perepezko، نويسنده , , J.H.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    8
  • From page
    279
  • To page
    286
  • Abstract
    The kinetic features governing SiC/metal reactions have been investigated to identify the operating mechanisms and diffusion characteristics. With respect to the contact metal components, the reaction characteristics were identified by two separate modes-formation of silicides and free carbon (Mode I), or formation of carbides and silicides (Mode II). The analysis was confirmed by comparing SiC/Ni and SiC/Cr reactions. The diffusion pathways for both reactions were examined in terms of a chemical potential framework. The application of the analysis has been extended to in-situ interface reactions of SiC/Cu/Ni and SiC/Cr/Ni. New reaction modes representing SiC/metal reactions are considered as well as a strategy to control the reaction pathway.
  • Keywords
    Interfacial reactions , Reaction pathway , SiC/metal , diffusion , Kinetics
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    1999
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2135445