Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss

InGaSb and Te-doped InSb crystals were grown in a vertical gradient freeze apparatus in the absence and presence of a magnetic field of 80 000 Gauss. Bubbles and cracks in InGaSb were studied by a scanning electron microscope. A number of micro-cracks and several macro-bubbles were observed in the conventionally grown crystals, whereas many micro-bubbles were visible in the crystals grown under the magnetic field. The InGaSb composition distributions were analyzed by energy dispersive X-ray spectroscopy. The composition was distributed more homogeneously in the axial direction, but more inhomogeneously in the radial direction in the crystals grown under the magnetic field. On the other hand, the axial Te profiles in Te-doped InSb were measured by atomic absorption spectrochemical analysis and found to be more uniform in the crystals grown under the magnetic field compared with those grown without the magnetic field. These results showed that the application of the 80.0 kG magnetic field influenced not only the crystal quality, but also the composition profiles by generating a Lorentz force to damp out the molten turbulence and reduce convective velocity.