Structural study of plasma enhanced chemical vapour deposited silicon carbide films

The effect of the molar gas ratio (X=C2H2/(C2H2+SiH4)) and rf power on the structural properties of plasma enhanced chemical vapour deposited hydrogenated amorphous silicon carbide films has been investigated. The deposition rate was found to increase as either X or rf power increases. The value of n reduces as either X or the rf power increases. It was concluded that high carbon concentration increases the disorder in the film and increases the gap value. The IR results show SiC bond increases with an increase in rf power or a decrease in X. The value of SiH bond decreases and CH bond increases with increases in X. Annealing increases the SiC bond but reduces the SiH and CH bonds.