Title of article :
Structural characterization of rapid thermally oxidized silicon–germanium–carbon alloy films
Author/Authors :
Choi، نويسنده , , W.K and Bera، نويسنده , , L.K. and Chen، نويسنده , , J.H. and Feng، نويسنده , , W and Pey، نويسنده , , K.L and Yoong، نويسنده , , Hans and Mi، نويسنده , , J and Zhang، نويسنده , , Fan and Yang، نويسنده , , C.Y، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The properties of as-prepared and rapidly thermally oxidized Si1−x−yGexCy alloy films have been examined using infrared, X-ray diffraction, and Raman techniques. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content such that the oxidized film compositions resemble that of Si1−xGex films. For tensile films, two broad layers co-exist in the oxidized films, one with a carbon content higher and the other lower than that required for full strain compensation.
Keywords :
Silicon–germanium–carbon alloy films , Raman spectroscopy , X-ray diffraction spectroscopy , Rapid thermally oxidized film
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B