Growth of GaN on Si substrates using BP thin layer as a buffer

BP epitaxial layer has been successfully grown on silicon(100) substrates with a dimension of 10×10 mm2. The layer obtained is markedly flat and continuous. The thickness was 4.56 μm during 2 h growth process. To elucidate the possibility to grow a zinc blende GaN layer on BP, epitaxial growth of GaN has been carried out. A 100% cubic GaN was successfully obtained.