Title of article
Characterization of GaN grown by RF plasma MBE
Author/Authors
Li، نويسنده , , W and Li، نويسنده , , A.Z and Qi، نويسنده , , M and Zhang، نويسنده , , Y.G. and Zhao، نويسنده , , Z.B. and Yang، نويسنده , , Q.K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
224
To page
227
Abstract
GaN (Gallium nitride) has been grown successfully on sapphire by RF plasma MBE through optimizing the growth condition. Two dimensional triple axis mapping (TDTAM) was used to characterize the GaN epilayers. The dislocation density in the epilayers was estimated to be about 7.8×108 cm−2 according to the mosaic model. The 77K photoluminescence (PL) of the Si-doped GaN with different concentration show that Si can act both donor and acceptor at very high concentration. Transmission spectrum has also been measured for further understanding of the sample.
Keywords
Gallium nitride (GaN) , RF plasma assisted molecular beam epitaxy (MBE) , Two dimensional triple axis mapping (TDTAM) , Photoluminescence (PL) , Transmission spectrum.
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135597
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