Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon

Radiation damage and annealing behavior of Si (100) implanted with 2 MeV Er+ ions with various doses have been investigated using Rutherford backscattering spectrometry and channelling (RBS/C) technique. The damage profile of silicon substrate induced by 2.0 MeV E+, at a dose of 1×1014 ions cm−2 was extracted using the multiple-scattering dechannelling model of Feldman, and the result is in good agreement with the TRIM96 calculation. The experimental results show that the annealing behavior of 2.0 MeV Er+ implanted into silicon is strongly influenced by the implantation dose and annealing temperature. For the samples with dose of 5×1014 ions cm−2 and more, an abnormal annealing behavior was found and a qualitative explanation has been given.