Author/Authors :
Han، نويسنده , , Zhengfu and Zhang، نويسنده , , Yuxuan and Tian، نويسنده , , Yangcao and Hu، نويسنده , , Yiguan and Kan، نويسنده , , Ya and Zhang، نويسنده , , Xinyi، نويسنده ,
Abstract :
The CNx film has been deposited on silicon substrate by the synchrotron radiation assisted CVD from highly pure nitrogen and CH3CN at temperature as lower as 275°C, and the film is only deposited on the svnchrotron radiation irradiated area. The XPS analysis shows that the N1s and C1s are located at 398.5 and 284.5 eV, respectively, which are identical to the theory and experimental results of other groups. The structure of CNx at different depths implies that a transition layer exists between the film and substrate.
