Title of article :
1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
Author/Authors :
Saint-Girons، نويسنده , , G and Mereuta، نويسنده , , A and Gérard، نويسنده , , J.M and Ramdane، نويسنده , , A and Sagnes، نويسنده , , I، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
1.32 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots (QDs) based P-N diodes is presented. High growth temperature of the upper cladding layer (670°C) induces a significant degradation and blueshift of the QDs emission, showing the importance to maintain a low thermal budget during the entire growth step.
Keywords :
LP-MOVPE , electroluminescence , Quantum dots , Re-growth temperature
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
